Products - Power
設計考慮因素
- 開始采用PWM驅動無刷直流電機控制
- 電機驅動MOSFET必須以低RDSon和良好的熱阻抗來滿足峰值高電流需求
- 如果過載情況會降低電池和柵極電壓,則可能需要具有強線性模式性能的MOSFET來提供反向電池保護
- MOSFET可能需要滿足UL2595等的具體間距要求
- 為小尺寸優化的電荷平衡MOSFET,通常裝在可移動電池組中——每個電池一個
UM90003: 4 kW Bridgeless Totem-pole PFC evaluation board
The NXTTP4000W066 evaluation board is a bridgeless totem-pole Power-Factor-Correction (PFC) circuit. Using Nexperia power GaN FETs a very high-efficiency single-phase AC-DC converter is realized by using a diode-free power GaN FET bridge.
MOSFET and GaN FET Handbook
Drawing on over 20 years’ of experience, the MOSFET and GaN FET Application Handbook: A Power Design Engineer’s Guide brings together a comprehensive set of learning and reference materials relating to the use of MOSFETs and GaN FETs in real world systems.