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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW)

The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.

NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board

Key features & benefits

The Gallium Nitride (GaN) FET GAN041-650WSB (35 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 3-pin TO-247 package. 

Key features of GAN041-650WSB include: 

  • Very low switching losses 
  • Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V. 
  • Very good QGD/QGS << 1 ratio, protects against parasitic turn-on 
  • Minimal reverse-recovery 
  • Best in class third-quadrant off-state conduction performance for wide-bandgap devices 

Key applications

板上的產(chǎn)品 (2)

Type number Description Status Quick access
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

相關(guān)板塊 (5)

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3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board 訂單
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板上的產(chǎn)品 (2)

Type number Description Status Quick access
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

相關(guān)板塊 (5)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board 訂單
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3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board 訂單
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文檔 (2)

文件名稱 標(biāo)題 類型 日期
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90010 NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB User manual 2023-10-23