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Click here for more information2PB709ARW
PNP general purpose transistors
PNP transistor in an SC-70 (SOT323) plastic package.
NPN complement: 2PD601AW
Features and benefits
High collector current (max. 100 mA)
Low collector-emitter saturation voltage (max. 500 mV).
AEC-Q101 qualified
Applications
General purpose switching and amplification.
參數類型
型號 | Package version | Package name | Size (mm) | TJ [max] (°C) |
---|---|---|---|---|
2PB709ARW | SOT323 | SC-70 | 2 x 1.25 x 0.95 | 150 |
封裝
下表中的所有產品型號均已停產 。
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
2PB709ARW | 2PB709ARW,115 (934057079115) |
Discontinued / End-of-life | N7% |
SC-70 (SOT323) |
SOT323 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT323_115 |
Series
文檔 (10)
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
2PB709AXW_SERIES | PNP general purpose transistors | Data sheet | 2002-06-25 |
SOT323 | 3D model for products with SOT323 package | Design support | 2019-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SC-70_SOT323_mk | plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
SOT323 | plastic, surface-mounted package; 3 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Package information | 2022-05-27 |
2PB709ARW_Nexperia_Product_Reliability | 2PB709ARW Nexperia Product Reliability | Quality document | 2024-04-22 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
2PB709ARW | 2PB709ARW SPICE model | SPICE model | 2024-08-27 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.