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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74AHC2G08GD

Dual 2-input AND gate

The 74AHC2G08; 74AHCT2G08 is a dual 2-input AND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.

此產品已停產

Features and benefits

  • Symmetrical output impedance

  • Balanced propagation delays

  • Wide supply voltage range from 2.0 to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • Input levels:

    • For 74AHC2G08: CMOS level

    • For 74AHCT2G08: TTL level

  • High noise immunity

  • CMOS low power dissipation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +80 °C and from -40 °C to +125 °C

參數類型

型號 Package name
74AHC2G08GD XSON8

文檔 (6)

文件名稱 標題 類型 日期
74AHC_AHCT2G08 Dual 2-input AND gate Data sheet 2023-09-01
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
ahc2g08 ahc2g08 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

文件名稱 標題 類型 日期
ahc2g08 ahc2g08 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.