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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AHC3GU04GD

Triple unbuffered inverter

The 74AHC3GU04 is a triple unbuffered inverter. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Symmetrical output impedance

  • Balanced propagation delays

  • Wide supply voltage range from 2.0 to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • CMOS input level

  • High noise immunity

  • CMOS low power dissipation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

參數(shù)類型

型號 Package name
74AHC3GU04GD XSON8

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AHC3GU04GD 74AHC3GU04GD,125
(935288572125)		 Obsolete AU4 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AHC3GU04GD 74AHC3GU04GD,125 74AHC3GU04GD rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
74AHC3GU04 Triple unbuffered inverter Data sheet 2023-09-06
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.