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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74AHCT2G08GD-Q100

Dual 2-input AND gate

The 74AHC2G08-Q100; 74AHCT2G08-Q100 is a dual 2-input AND gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Symmetrical output impedance

  • Balanced propagation delays

  • Wide supply voltage range from 2.0 to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • Input levels:

    • For 74AHC2G08-Q100: CMOS level

    • For 74AHCT2G08-Q100: TTL level

  • High noise immunity

  • CMOS low power dissipation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level A

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

參數(shù)類型

型號 Package name
74AHCT2G08GD-Q100 XSON8

文檔 (4)

文件名稱 標題 類型 日期
74AHC_AHCT2G08_Q100 Dual 2-input AND gate Data sheet 2023-09-01
ahct2g08 ahct2g08 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

文件名稱 標題 類型 日期
ahct2g08 ahct2g08 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.