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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74AUP1G97UK

Low-power configurable multiple function gate

The 74AUP1G97 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產品已停產

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數類型

型號 Package name
74AUP1G97UK WLCSP6

文檔 (4)

文件名稱 標題 類型 日期
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
aup1g97 aup1g97 IBIS model IBIS model 2015-09-06
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15

支持

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模型

文件名稱 標題 類型 日期
aup1g97 aup1g97 IBIS model IBIS model 2015-09-06

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.