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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74AUP2G125GD

Low-power dual buffer/line driver; 3-state

The 74AUP2G125 is a dual buffer/line driver with 3-state outputs controlled by the output enable inputs (nOE). Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產品已停產

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • High noise immunity

  • CMOS low power dissipation

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Latch-up performance exceeds 100 mA per JESD78B Class II

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • Input-disable feature allows floating input conditions

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數類型

型號 Package name
74AUP2G125GD XSON8

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
74AUP2G125GD 74AUP2G125GD,125
(935288282125)		 Withdrawn / End-of-life p25 SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74AUP2G125GD 74AUP2G125GD,125 74AUP2G125GD rohs rhf rhf
品質及可靠性免責聲明

文檔 (7)

文件名稱 標題 類型 日期
74AUP2G125 Low-power dual buffer/line driver; 3-state Data sheet 2024-08-12
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11052 Pin FMEA for AUP family Application note 2019-01-09
aup2g125 aup2g125 IBIS model IBIS model 2013-04-07
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

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模型

文件名稱 標題 類型 日期
aup2g125 aup2g125 IBIS model IBIS model 2013-04-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.