可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
---|---|---|---|---|
74AUP2G79DC | 74AUP2G79DC,125 | 935280719125 | SOT765-1 | 訂單產品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationLow-power dual D-type flip-flop; positive-edge trigger
The 74AUP2G79 provides the dual positive-edge triggered D-type flip-flop. Information on the data input (nD) is transferred to the nQ output on the LOW-to-HIGH transition of the clock pulse (nCP). The nD input must be stable one set-up time prior to the LOW-to-HIGH clock transition for predictable operation.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|
74AUP2G79DC | 0.8?-?3.6 | CMOS | ± 1.9 | 8.5 | 400 | ultra low | -40~125 | VSSOP8 |
Model Name | 描述 |
---|---|
|
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
74AUP2G79DC | 74AUP2G79DC,125 (935280719125) |
Active | p79 |
VSSOP8 (SOT765-1) |
SOT765-1 | SOT765-1_125 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
74AUP2G79 | Low-power dual D-type flip-flop; positive-edge trigger | Data sheet | 2023-07-18 |
AN10161 | PicoGate Logic footprints | Application note | 2002-10-29 |
AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT765-1 | 3D model for products with SOT765-1 package | Design support | 2020-01-22 |
aup2g79 | aup2g79 IBIS model | IBIS model | 2013-04-07 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
VSSOP8_SOT765-1_mk | plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT765-1 | plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm body | Package information | 2022-06-03 |
SOT765-1_125 | VSSOP8; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
74AUP2G79DC_Nexperia_Product_Reliability | 74AUP2G79DC Nexperia Product Reliability | Quality document | 2024-06-16 |
型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
74AUP2G79DC | 74AUP2G79DC,125 | 935280719125 | Active | SOT765-1_125 | 3,000 | 訂單產品 |
作為 Nexperia 的客戶,您可以通過我們的銷售機構訂購樣品。
如果您沒有 Nexperia 的直接賬戶,我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表。
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.