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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74AVC20T245BX

20-bit dual supply translating transceiver with configurable voltage translation; 3-state

The 74AVC20T245 is a 20-bit, dual supply transceiver that enables bi-directional voltage level translation. The device can be used as two 10-bit transceivers or as a single 20-bit transceiver. It features four 10-bit input-output ports (1An, 1Bn and 2An, 2Bn), two output enable inputs (nOE), two direction inputs (nDIR) and dual supplies (VCC(A) and VCC(B)). VCC(A) and VCC(B) can be independently supplied at any voltage between 0.8 V and 3.6 V making the device suitable for bi?-?directional voltage level translation between any of the low voltage nodes: 0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V. The 1An and 2An ports, nOE and nDIR are referenced to VCC(A), the 1Bn and 2Bn ports are referenced to VCC(B). A HIGH on a 1DIR allows transmission from 1An to 1Bn and a LOW on 1DIR allows transmission from 1Bn to 1An. A HIGH on nOE causes the outputs to assume a HIGH impedance OFF-state.

The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, all output ports will assume a high impedance OFF-state.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 0.8 V to 3.6 V

    • VCC(B): 0.8 V to 3.6 V

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • Maximum data rates:

    • 380 Mbit/s (≥ 1.8 V to 3.3 V translation)

    • 260 Mbit/s (≥ 1.1 V to 3.3 V translation)

    • 260 Mbit/s (≥ 1.1 V to 2.5 V translation)

    • 210 Mbit/s (≥ 1.1 V to 1.8 V translation)

    • 120 Mbit/s (≥ 1.1 V to 1.5 V translation)

    • 100 Mbit/s (≥ 1.1 V to 1.2 V translation)

  • Suspend mode

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Inputs accept voltages up to 3.6 V

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號(hào) Package name
74AVC20T245BX HXQFN60U

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74AVC20T245BX 74AVC20T245BX,518
(935295867518)		 Obsolete AVC20T245 Standard Procedure Standard Procedure no package information

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74AVC20T245BX 74AVC20T245BX,518 74AVC20T245BX rohs rhf rhf
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文檔 (2)

文件名稱 標(biāo)題 類型 日期
74AVC20T245 20-bit dual supply translating transceiver with configurable voltage translation; 3-state Data sheet 2024-06-25
AN90007 Pin FMEA for AVC family Application note 2018-11-30

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模型

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.