可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
---|---|---|---|---|
74AVC4T3144GU12-Q100 | 74AVC4T3144GU12-QX | 935690912115 | SOT1174-1 | 訂單產品 |
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Click here for more information4-bit dual-supply buffer/level translator; 3-state
The 74AVC4T3144-Q100 is a 4-bit, dual-supply level translating buffer with 3-state outputs. It features four data inputs (An and B4), four data outputs (YBn and YA4), and an output enable input (OE). The device is configured to translate three inputs from VCC(A) to VCC(B) and one input from VCC(B) to VCC(A). OE, An and YA4 are referenced to VCC(A) and YBn and B4 are referenced to VCC(B). A HIGH on OE causes the outputs to assume a high-impedance OFF-state.
The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables outputs, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, all outputs are in the high?-?impedance OFF-state.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range:
VCC(A): 0.8 V to 3.6 V
VCC(B): 0.8 V to 3.6 V
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Maximum data rates:
380 Mbit/s (≥ 1.8 V to 3.3 V translation)
200 Mbit/s (≥ 1.1 V to 3.3 V translation)
200 Mbit/s (≥ 1.1 V to 2.5 V translation)
200 Mbit/s (≥ 1.1 V to 1.8 V translation)
150 Mbit/s (≥ 1.1 V to 1.5 V translation)
100 Mbit/s (≥ 1.1 V to 1.2 V translation)
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3B exceeds 8000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
型號 | VCC (V) | Logic switching levels | Output drive capability (mA) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|
74AVC4T3144GU12-Q100 | n.a. | CMOS/LVTTL | ± 12 | 4 | very low | -40~125 | 188 | 6.2 | 96 | XQFN12 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
74AVC4T3144GU12-Q100 | 74AVC4T3144GU12-QX (935690912115) |
Active |
XQFN12 (SOT1174-1) |
SOT1174-1 | SOT1174-1_115 |
型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
---|---|---|---|---|
74AVC4T3144GU12-Q100 | 74AVC4T3144GU12-QX | 74AVC4T3144GU12-Q100 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
74AVC4T3144_Q100 | 4-bit dual-supply buffer/level translator; 3-state | Data sheet | 2024-07-02 |
AN90007 | Pin FMEA for AVC family | Application note | 2018-11-30 |
SOT1174-1 | 3D model for products with SOT1174-1 package | Design support | 2021-01-28 |
avc4t3144 | IBIS model of 74AVC4T3144 | IBIS model | 2017-12-22 |
74AVC4T3144_and_74LVC4T3144_leaflet | Dual supply translating buffers/line drivers | Leaflet | 2018-03-09 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1174-1 | plastic, leadless extremely thin quad flat package; 12 terminals; 0.4 mm pitch; 2 mm x 1.7 mm x 0.5 mm body | Package information | 2024-04-11 |
SOT1174-1_115 | XQFN12; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-04-21 |
74AVC4T3144GU12-Q100_Nexperia_Product_Reliability | 74AVC4T3144GU12-Q100 Nexperia Product Reliability | Quality document | 2024-06-16 |
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型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
74AVC4T3144GU12-Q100 | 74AVC4T3144GU12-QX | 935690912115 | Active | SOT1174-1_115 | 4,000 | 訂單產品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.