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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74HC2G00GD

Dual 2-input NAND gate

The 74HC2G00; 74HCT2G00 is a dual 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • CMOS low power dissipation

  • Input levels:

    • For 74HC2G00: CMOS level

    • For 74HCT2G00: TTL level

  • Symmetrical output impedance

  • High noise immunity

  • Balanced propagation delays

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類(lèi)型

型號(hào) Package name
74HC2G00GD XSON8

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74HC2G00GD 74HC2G00GD,125
(935286846125)
Obsolete H00 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2)
SOT996-2 SOT996-2_125

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74HC2G00GD 74HC2G00GD,125 74HC2G00GD rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (6)

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
74HC_HCT2G00 Dual 2-input NAND gate Data sheet 2024-08-13
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
hc2g00 74HC2G00 IBIS model IBIS model 2019-03-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

文件名稱(chēng) 標(biāo)題 類(lèi)型 日期
hc2g00 74HC2G00 IBIS model IBIS model 2019-03-13

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.