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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74HC2G125GD

Dual buffer/line driver; 3-state

The 74HC2G125; 74HC2G125 are dual buffer/line drivers with 3-state outputs controlled by the output enable inputs (nOE). Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

此產品已停產

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • Input levels:

    • For 74HC2G125: CMOS level

    • For 74HCT2G125: TTL level

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standard: JESD7A (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數類型

型號 Package name
74HC2G125GD XSON8

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
74HC2G125GD 74HC2G125GD,125
(935287332125)		 Obsolete H25 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74HC2G125GD 74HC2G125GD,125 74HC2G125GD rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
74HC_HCT2G125 Dual buffer/line driver; 3-state Data sheet 2023-11-16
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
74hc2g125gd 74hc2g125gd IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

文件名稱 標題 類型 日期
74hc2g125gd 74hc2g125gd IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.