久久国产加勒比精品无码,男女高潮又爽又黄又无遮挡,国产精品揄拍100视频,亚洲18色成人网站WWW

雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74HC3GU04GD

Triple unbuffered inverter

The 74HC3GU04 is a triple unbuffered inverter. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • Symmetrical output impedance

  • High noise immunity

  • Low-power dissipation

  • Balanced propagation delays

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號(hào) Package name
74HC3GU04GD XSON8

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào),(訂購碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74HC3GU04GD 74HC3GU04GD,125
(935288593125)
Obsolete HU4 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2)
SOT996-2 SOT996-2_125

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
74HC3GU04GD 74HC3GU04GD,125 74HC3GU04GD rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (5)

文件名稱 標(biāo)題 類型 日期
74HC3GU04 Triple unbuffered inverter Data sheet 2024-08-05
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.