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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVC16245AEV-Q100

16-bit bus transceiver with direction pin; 5 V tolerant; 3-state

The 74LVC16245A-Q100; 74LVCH16245A-Q100 is a 16-bit transceiver with 3-state outputs. The device can be used as two 8-bit transceivers or one 16-bit transceiver. The device features two output enables (1OE and 2OE) each controlling eight outputs, and two send/receive (1DIR and 2DIR) inputs for direction control. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Overvoltage tolerant inputs to 5.5 V

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power dissipation

  • MULTIBYTE flow-through standard pin-out architecture

  • Low inductance multiple power and ground pins for minimum noise and ground bounce

  • Direct interface with TTL levels

  • All data inputs have bus hold (74LVCH16245A-Q100 only)

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A (2.3 V to 2.7 V)

    • JESD8-C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

參數(shù)類型

型號 Package name
74LVC16245AEV-Q100 VFBGA56

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC16245AEV-Q100 74LVC16245AEV-Q10Y
(935299477518)		 Obsolete LVC16245A Standard Procedure Standard Procedure LVC16245A According NX3-00133 According NX3-00133 no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74LVC16245AEV-Q100 74LVC16245AEV-Q10Y 74LVC16245AEV-Q100 rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (2)

文件名稱 標(biāo)題 類型 日期
74LVC_LVCH16245A_Q100 16-bit bus transceiver with direction pin; 5 V tolerant; 3-state Data sheet 2024-04-23
lvc16245a lvc16245a IBIS model IBIS model 2013-04-08

支持

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模型

文件名稱 標(biāo)題 類型 日期
lvc16245a lvc16245a IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.