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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74LVC16373ADL

16-bit D-type transparent latch with 5 V tolerant inputs?/?outputs; 3-state

The 74LVC16373A and 74LVCH16373A are 16-bit D-type transparent latches with 3-state outputs. The devices can be used as two 8-bit transparent latches or a single 16-bit transparent latch. The devices feature two latch enables (1LE and 2LE) and two output enables (1OE and 2OE), each controlling 8-bits. When nLE is HIGH, data at the inputs enter the latches. In this condition the latches are transparent, a latch output will change each time its corresponding D-input changes. When nLE is LOW the latches store the information that was present at the inputs a set-up time preceding the HIGH-to-LOW transition of nLE. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state. Operation of the nOE input does not affect the state of the latches. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

Bus hold on the data inputs eliminates the need for external pull?-?up resistors to hold unused inputs.

此產品已停產

Features and benefits

  • Overvoltage tolerant inputs to 5.5 V

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power dissipation

  • MULTIBYTE flow-through standard pinout architecture

  • Multiple low inductance supply pins for minimum noise and ground bounce

  • Direct interface with TTL levels

  • All data inputs have bus hold (74LVCH16373A only)

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standards:
    • JESD8-7A (1.65 V to 1.95 V)
    • JESD8-5A (2.3 V to 2.7 V)
    • JESD8-C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數類型

型號 Package name
74LVC16373ADL SSOP48

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC16373ADL 74LVC16373ADL,112
(935235160112)		 Withdrawn / End-of-life LVC16373A SOT370-1
SSOP48
(SOT370-1) 		SOT370-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暫無信息
74LVC16373ADL,118
(935235160118)		 Obsolete LVC16373A SOT370-1_118

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVC16373ADL 74LVC16373ADL,112 74LVC16373ADL rohs rhf rhf
74LVC16373ADL 74LVC16373ADL,118 74LVC16373ADL rohs rhf rhf
品質及可靠性免責聲明

文檔 (8)

文件名稱 標題 類型 日期
74LVC_LVCH16373A 16-bit D-type transparent latch with 5 V tolerant inputs?/?outputs; 3-state Data sheet 2024-04-23
AN11009 Pin FMEA for LVC family Application note 2019-01-09
AN263 Power considerations when using CMOS and BiCMOS logic devices Application note 2023-02-07
lvc16373a 74LVC16373A IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT370-1 plastic, shrink small outline package; 48 leads; 0.635 mm pitch; 15.9 mm x 7.5 mm x 2.8 mm body Package information 2020-04-21
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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模型

文件名稱 標題 類型 日期
lvc16373a 74LVC16373A IBIS model IBIS model 2013-04-08

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.