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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調(diào)節(jié)ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產(chǎn)品(AEC-Q100/Q101)

74LVC1G80GF

Single D-type flip-flop; positive-edge trigger

The 74LVC1G80 is a single positive-edge triggered D-type flip-flop. Data at the D-input that meets the set-up and hold time requirements on the LOW-to-HIGH clock transition will be stored in the flip-flop and its complement will appear at the Q output. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • Overvoltage tolerant inputs to 5.5 V

  • High noise immunity

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low power dissipation

  • Direct interface with TTL levels

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 250 mA

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

參數(shù)類型

型號 Package name
74LVC1G80GF XSON6

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態(tài) 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC1G80GF 74LVC1G80GF,132
(935282426132)
Obsolete VT SOT891
XSON6
(SOT891)
SOT891 REFLOW_BG-BD-1
SOT891_132

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVC1G80GF 74LVC1G80GF,132 74LVC1G80GF rohs rhf rhf
品質(zhì)及可靠性免責聲明

文檔 (12)

文件名稱 標題 類型 日期
74LVC1G80 Single D-type flip-flop; positive-edge trigger Data sheet 2024-11-12
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT891 3D model for products with SOT891 package Design support 2019-10-03
lvc1g80 74LVC1G80 IBIS model IBIS model 2014-10-20
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1010-6_SOT891_mk plastic, extremely thin small outline package; 6 terminals; 0.55 mm pitch; 1 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT891 plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1 mm x 0.5 mm body Package information 2020-04-21
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
lvc lvc Spice model SPICE model 2013-05-07
MAR_SOT891 MAR_SOT891 Topmark Top marking 2013-06-03

支持

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模型

文件名稱 標題 類型 日期
lvc1g80 74LVC1G80 IBIS model IBIS model 2014-10-20
lvc lvc Spice model SPICE model 2013-05-07
SOT891 3D model for products with SOT891 package Design support 2019-10-03

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.