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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74LVC2G125GD

Dual bus buffer/line driver; 3-state

The 74LVC2G125 is a dual buffer/line driver with 3-state outputs controlled by the output enable inputs (nOE). Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產品已停產

Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • High noise immunity

  • IOFF circuitry provides partial Power-down mode operation

  • ±24 mA output drive (VCC = 3.0 V)

  • CMOS low-power consumption

  • Latch-up performance exceeds 250 mA

  • Direct interface with TTL levels

  • Overvoltage tolerant inputs to 5.5 V

  • Complies with JEDEC standard:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

文檔 (5)

文件名稱 標題 類型 日期
74LVC2G125 Dual bus buffer/line driver; 3-state Data sheet 2024-08-12
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11009 Pin FMEA for LVC family Application note 2019-01-09
lvc2g125 74LVC2G125 IBIS model IBIS model 2014-10-20
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

支持

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模型

文件名稱 標題 類型 日期
lvc2g125 74LVC2G125 IBIS model IBIS model 2014-10-20

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.