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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74LVC2T45GF

Dual supply translating transceiver; 3-state

The 74LVC2T45; 74LVCH2T45 are dual bit, dual supply translating transceivers with 3-state outputs that enable bidirectional level translation. They feature two 2-bits input-output ports (nA and nB), a direction control input (DIR) and dual supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 1.2 V and 5.5 V making the device suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins nA and DIR are referenced to VCC(A) and pins nB are referenced to VCC(B). A HIGH on DIR allows transmission from nA to nB and a LOW on DIR allows transmission from nB to nA.

The devices are fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In suspend mode when either VCC(A) or VCC(B) are at GND level, both A port and B port are in the high-impedance OFF-state.

Active bus hold circuitry in the 74LVCH2T45 holds unused or floating data inputs at a valid logic level.

此產品已停產

Features and benefits

  • Wide supply voltage range:

    • VCC(A): 1.2 V to 5.5 V

    • VCC(B): 1.2 V to 5.5 V

  • High noise immunity

  • Complies with JEDEC standards:

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • Maximum data rates:

    • 420 Mbps (3.3 V to 5.0 V translation)

    • 210 Mbps (translate to 3.3 V))

    • 140 Mbps (translate to 2.5 V)

    • 75 Mbps (translate to 1.8 V)

    • 60 Mbps (translate to 1.5 V)

  • Suspend mode

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • ±24 mA output drive (VCC = 3.0 V)

  • Inputs accept voltages up to 5.5 V

  • Low power consumption: 16 μA maximum ICC

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 4000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數類型

型號 Package name
74LVC2T45GF XSON8

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVC2T45GF 74LVC2T45GF,115
(935291513115)		 Withdrawn / End-of-life V5 SOT1089
XSON8
(SOT1089) 		SOT1089 REFLOW_BG-BD-1
SOT1089_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVC2T45GF 74LVC2T45GF,115 74LVC2T45GF rohs rhf rhf
品質及可靠性免責聲明

文檔 (11)

文件名稱 標題 類型 日期
74LVC_LVCH2T45 Dual supply translating transceiver; 3-state Data sheet 2024-04-30
AN11009 Pin FMEA for LVC family Application note 2019-01-09
Nexperia_document_guide_Logic_translators Nexperia Logic Translators Brochure 2021-04-12
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07
lvc2t45 lvc2t45 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
XSON8_SOT1089_mk plastic, extremely thin small outline package; no leads; 8 terminals; 0.55 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT1089 plastic, leadless extremely thin small outline package; 8 terminals; 0.35 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Package information 2022-06-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT1089 MAR_SOT1089 Topmark Top marking 2013-06-03

支持

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模型

文件名稱 標題 類型 日期
lvc2t45 lvc2t45 IBIS model IBIS model 2013-04-08
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.