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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

74LVCH16374ABX

16-bit edge-triggered D-type flip-flop; 5 V tolerant; 3-state

The 74LVC16374A; 74LVCH16374A is a 16?-?bit edge?-?triggered D?-?type flip?-?flop with 3?-?state outputs. The device can be used as two 8?-?bit flip?-?flops or one 16?-?bit flip?-?flop. The device features two clocks (1CP and 2CP) and two output enables (1OE and 2OE), each controlling 8?-?bits. The flip?-?flops will store the state of their individual D?-?inputs that meet the set?-?up and hold time requirements on the LOW?-?to?-?HIGH clock (nCP) transition. A HIGH on nOE causes the outputs to assume a high?-?impedance OFF?-?state. Operation of the nOE input does not affect the state of the flip?-?flops. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt?-?trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Overvoltage tolerant inputs to 5.5 V

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power dissipation

  • Multibyte flow-through standard pinout architecture

  • Low inductance multiple supply pins for minimum noise and ground bounce

  • Direct interface with TTL levels

  • All data inputs have bus hold (74LVCH16374A only)

  • High-impedance outputs when VCC = 0 V

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A (2.3 V to 2.7 V)

    • JESD8-C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

參數(shù)類型

型號 Package name
74LVCH16374ABX HXQFN60U

封裝

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
74LVCH16374ABX 74LVCH16374ABX,518
(935295875518)		 Obsolete LVCH16374A Standard Procedure Standard Procedure no package information

環(huán)境信息

下表中的所有產(chǎn)品型號均已停產(chǎn) 。

型號 可訂購的器件編號 化學(xué)成分 RoHS RHF指示符
74LVCH16374ABX 74LVCH16374ABX,518 74LVCH16374ABX rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (2)

文件名稱 標(biāo)題 類型 日期
74LVC_LVCH16374A 16-bit edge-triggered D-type flip-flop; 5 V tolerant; 3-state Data sheet 2024-04-22
lvch16374a lvch16374a IBIS model IBIS model 2013-04-09

支持

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模型

文件名稱 標(biāo)題 類型 日期
lvch16374a lvch16374a IBIS model IBIS model 2013-04-09

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.