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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

74LVT126DB

3.3 V quad buffer; 3-state

The 74LVT126 is a quad buffer/line driver with 3-state outputs controlled by the output enable inputs (nOE). A LOW on nOE causes the outputs to assume a high impedance OFF-state. Bus hold data inputs eliminate the need for external pull-up resistors to define unused inputs. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

此產品已停產

Features and benefits

  • Quad bus interface

  • 3-state buffers

  • Wide supply voltage range from 2.7 to 3.6 V

  • Overvoltage tolerant inputs to 5.5 V

  • BiCMOS high speed and output drive

  • Output capability: +64 mA and -32 mA

  • Direct interface with TTL levels

  • Input and output interface capability to systems at 5 V supply

  • Bus-hold data inputs eliminate the need for external pull-up resistors to hold unused inputs

  • Live insertion and extraction permitted

  • No bus current loading when output is tied to 5 V bus

  • Power-up 3-state

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 500 mA per JESD 78 Class II Level B

  • Complies with JEDEC standard JESD8C (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
74LVT126DB 74LVT126DB,112
(935209460112)		 Obsolete no package information
74LVT126DB,118
(935209460118)		 Obsolete

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
74LVT126DB 74LVT126DB,112 74LVT126DB rohs rhf rhf
74LVT126DB 74LVT126DB,118 74LVT126DB rohs rhf rhf
品質及可靠性免責聲明

文檔 (3)

文件名稱 標題 類型 日期
74LVT126 3.3 V quad buffer; 3-state Data sheet 2024-04-18
lvt126 74LVT126 IBIS model IBIS model 2019-02-04
lvt lvt Spice model SPICE model 2013-05-07

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
lvt126 74LVT126 IBIS model IBIS model 2019-02-04
lvt lvt Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.