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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BAS116T

Single low leakage current switching diode

Single low leakage current switching diode, encapsulated in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

此產品已停產

Features and benefits

  • High switching speed: trr = 0.8 μs
  • Low leakage current: 3 pA
  • Repetitive peak reverse voltage: VRRM ≤ 85 V
  • AEC-Q101 qualified
  • Low capacitance: Cd = 2 pF
  • Reverse voltage: VR ≤ 75 V
  • Ultra small SMD plastic package

Applications

  • Low leakage current applications
  • General-purpose switching
  • Voltage clamping
  • Reverse polarity protection

參數類型

型號 Package version Package name Size (mm)
BAS116T SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
BAS116T BAS116T,115
(934063959115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
BAS116T BAS116T,115 BAS116T rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
BAS116T Single low leakage current switching diode Data sheet 2012-07-10
AN90063 Questions about package outline drawings Application note 2025-03-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2025-01-31
BAS116T BAS116T SPICE model SPICE model 2025-03-28

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。


Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


模型

文件名稱 標題 類型 日期
BAS116T BAS116T SPICE model SPICE model 2025-03-28

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.