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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BAV70T

High-speed switching diodes

High-speed switching diode, encapsulated in small Surface-Mounted Device (SMD) plastic packages.

此產品已停產

Features and benefits

  • High switching speed: trr ≤ 4 ns
  • Low capacitance: Cd ≤ 1.5 pF
  • Low leakage current
  • Reverse voltage: VR ≤ 100 V
  • Ultra small SMD plastic package
  • AEC-Q101 qualified

Applications

  • High-speed switching
  • General-purpose switching

參數類型

型號 Package version Package name Size (mm)
BAV70T SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
BAV70T BAV70T,115
(934054727115)
Obsolete SOT416
SC-75
(SOT416)
SOT416 SOT416_115
BAV70T,145
(934054727145)
Obsolete 暫無信息
BAV70T,185
(934054727185)
Obsolete 暫無信息
BAV70T/G,115
(934058356115)
Obsolete SOT416_115
BAV70T/DG,115
(934061911115)
Obsolete SOT416_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
BAV70T BAV70T,115 BAV70T rohs rhf rhf
BAV70T BAV70T,145 BAV70T rohs rhf rhf
BAV70T BAV70T,185 BAV70T rohs rhf rhf
BAV70T BAV70T/G,115 BAV70T rohs rhf rhf
BAV70T BAV70T/DG,115 BAV70T rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
BAV70_SER High-speed switching diodes Data sheet 2022-07-01
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMDIO Letter Symbols - Diodes General Other type 1999-04-30
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
BAV70T BAV70T SPICE model SPICE model 2012-07-22

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
BAV70T BAV70T SPICE model SPICE model 2012-07-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.