久久国产加勒比精品无码,男女高潮又爽又黄又无遮挡,国产精品揄拍100视频,亚洲18色成人网站WWW

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BC869-16-Q

20 V, 2 A PNP medium power transistors

PNP medium power transistor in a SOT89 (SC-62) medium power and flat lead plastic package.

Features and benefits

  • High current

  • Three current gain selections

  • High power dissipation capability

  • Exposed heatsink for excellent thermal and electrical conductivity

  • Leadless very small SMD plastic package with medium power capability

  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Linear voltage regulators

  • High-side switches

  • Battery-driven devices

  • Power management

  • MOSFET drivers

  • Amplifiers

文檔 (1)

文件名稱 標題 類型 日期
BC869-Q_SER 20 V, 2 A PNP medium power transistors Data sheet 2024-12-11

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

No documents available

訂購、定價與供貨

樣品

作為 Nexperia 的客戶,您可以通過我們的銷售機構訂購樣品。

如果您沒有 Nexperia 的直接賬戶,我們的全球和地區分銷商網絡可為您提供 Nexperia 樣品支持。查看官方經銷商列表

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.