久久国产加勒比精品无码,男女高潮又爽又黄又无遮挡,国产精品揄拍100视频,亚洲18色成人网站WWW

雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BSN254

N-channel vertical D-MOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此產品已停產

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for use with all 5 V logic families

Applications

  • Line current interruptors in telephone sets
  • Relay, high-speed and line transformer drivers

參數類型

型號 Package version Package name Product status Release date
BSN254 SOT54 TO-92 End of life 2010-08-03

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
BSN254 BSN254,126
(934004930126)
Obsolete no package information

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
BSN254 BSN254,126 BSN254 rohs rhf rhf
品質及可靠性免責聲明

文檔 (7)

文件名稱 標題 類型 日期
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
BSN254 BSN254 SPICE model SPICE model 2012-06-08
BSN254A BSN254A SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
BSN254 BSN254 SPICE model SPICE model 2012-06-08
BSN254A BSN254A SPICE model SPICE model 2012-06-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.