久久国产加勒比精品无码,男女高潮又爽又黄又无遮挡,国产精品揄拍100视频,亚洲18色成人网站WWW

雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BUK6207-55C

N-channel TrenchMOS intermediate level FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • AEC Q101 compliant
  • Compatible with logic and standard level gate drives
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V and 24 V automotive systems
  • Electric and electro-hydraulic power steering
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 5 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK6207-55C SOT428 DPAK End of life N 1 55 7.8 10 12 175 90 19 82 158 86 2.3 Y 3870 381 2010-10-11

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
BUK6207-55C BUK6207-55C,118
(934064256118)		 Obsolete BUK6207 55C SOT428
DPAK
(SOT428) 		SOT428 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT428_118

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
BUK6207-55C BUK6207-55C,118 BUK6207-55C rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (21)

文件名稱 標(biāo)題 類型 日期
BUK6207-55C N-channel TrenchMOS intermediate level FET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT428 3D model for products with SOT428 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DPAK_SOT428_mk plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Marcom graphics 2017-01-28
SOT428 plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BUK6207-55C BUK6207-55C SPICE model SPICE model 2012-04-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
BUK6207-55C_RC_Thermal_Model BUK6207-55C Thermal design model Thermal design 2021-01-18
BUK6207-55C BUK6207-55C Thermal model Thermal model 2010-09-24
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
BUK6207-55C BUK6207-55C SPICE model SPICE model 2012-04-12
BUK6207-55C_RC_Thermal_Model BUK6207-55C Thermal design model Thermal design 2021-01-18
BUK6207-55C BUK6207-55C Thermal model Thermal model 2010-09-24
SOT428 3D model for products with SOT428 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.