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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

BUK6E2R0-40C

N-channel TrenchMOS FET

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • AEC Q101 compliant
  • Suitable for intermediate level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V Automotive systems
  • Electric (hydraulic) power steering
  • HVAC
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching

參數(shù)類型

型號(hào) Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Release date
BUK6E2R0-40C End of life N 1 40 2 175 100 333 2.1 Y 2009-11-19

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
BUK6E2R0-40C BUK6E2R0-40C,127
(934063964127)
Obsolete no package information

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
BUK6E2R0-40C BUK6E2R0-40C,127 BUK6E2R0-40C rohs rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (6)

文件名稱 標(biāo)題 類型 日期
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11261 RC Thermal Models Application note 2021-03-18
BUK6E2R0-40C BUK6E2R0-40C SPICE model SPICE model 2012-04-12

支持

如果您需要設(shè)計(jì)/技術(shù)支持,請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
BUK6E2R0-40C BUK6E2R0-40C SPICE model SPICE model 2012-04-12

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.