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Click here for more informationBUK7212-55B
N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
AEC Q101 compliant
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Suitable for thermally demanding environments due to 185 °C rating
Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
參數類型
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK7212-55B | SOT428 | DPAK | End of life | N | 1 | 55 | 12 | 185 | 83 | 12 | 35 | 167 | 65 | 3 | Y | 1840 | 379 | 2011-02-24 |
封裝
下表中的所有產品型號均已停產 。
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
BUK7212-55B | BUK7212-55B,118 (934057707118) |
Discontinued / End-of-life | BUK7212 55B |
DPAK (SOT428) |
SOT428 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT428_118 |
環境信息
下表中的所有產品型號均已停產 。
型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
---|---|---|---|---|
BUK7212-55B | BUK7212-55B,118 | BUK7212-55B |
文檔 (18)
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
BUK7212-55B | N-channel TrenchMOS standard level FET | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT428 | 3D model for products with SOT428 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DPAK_SOT428_mk | plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body | Marcom graphics | 2017-01-28 |
SOT428 | plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body | Package information | 2022-05-20 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。
模型
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
SOT428 | 3D model for products with SOT428 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.