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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BUK7C06-40AITE

N-channel TrenchPLUS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

此產品已停產

Features and benefits

  • AEC-Q101 compliant
  • Allows responsive temperature monitoring due to integrated temperature sensor
  • Electrostatically robust due to integrated protection diodes
  • Low conduction losses due to low on-state resistance
  • Reduced component count due to integrated current sensor

Applications

  • Automotive and general purpose power switching
  • Electrical Power Assisted Steering (EPAS)
  • Fan control
  • Variable valve timing for engines

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Automotive qualified Release date
BUK7C06-40AITE SOT427 D2PAK-7 End of life N 1 40 6 175 155 50 272 Y 2010-10-15

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
BUK7C06-40AITE BUK7C06-40AITE,118
(934057268118)		 Obsolete BUK7C06 40AITE P**XXYY AZ Batch No SOT427
D2PAK-7
(SOT427) 		SOT427 SOT427_118

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
BUK7C06-40AITE BUK7C06-40AITE,118 BUK7C06-40AITE rohs rhf
品質及可靠性免責聲明

文檔 (14)

文件名稱 標題 類型 日期
BUK7C06-40AITE N-channel TrenchPLUS standard level FET Data sheet 2009-02-17
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT427 plastic, single-ended surface-mounted package (D2PAK-7); 7 leads; 1.27 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

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模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.