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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BUK7E2R3-40C

N-channel TrenchMOS standard level FET

Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications.

此產品已停產

Features and benefits

  • AEC Q101 compliant
  • Avalanche robust
  • Suitable for standard level gate drive
  • Suitable for thermally demanding environment up to 175°C rating

Applications

  • 12V Motor, lamp and solenoid loads
  • High performance automotive power systems
  • High performance Pulse Width Modulation (PWM) applications

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK7E2R3-40C SOT226 I2PAK End of life N 1 40 2.3 175 276 67 175 333 57 3 Y 8492 1606 2010-09-24

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
BUK7E2R3-40C BUK7E2R3-40C,127
(934059861127)		 Obsolete BUK7E2R3 40C P**XXYY AZ Batch No. SOT226
I2PAK
(SOT226) 		SOT226 暫無信息

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
BUK7E2R3-40C BUK7E2R3-40C,127 BUK7E2R3-40C rohs rhf
品質及可靠性免責聲明

文檔 (17)

文件名稱 標題 類型 日期
BUK7E2R3-40C N-channel TrenchMOS standard level FET Data sheet 2017-05-08
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
BUK7E2R3-40C_RC_Thermal_Model BUK7E2R3-40C Thermal design model Thermal design 2021-01-18
BUK7E2R3-40C BUK7E2R3-40C Thermal model Thermal model 2010-09-24

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
BUK7E2R3-40C_RC_Thermal_Model BUK7E2R3-40C Thermal design model Thermal design 2021-01-18
BUK7E2R3-40C BUK7E2R3-40C Thermal model Thermal model 2010-09-24
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.