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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

BZX8450-C30

Low-current voltage regulator diodes

Low-current voltage regulator diodes in a small SOT23 Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Total power dissipation: ≤ 250 mW

  • Two tolerance series: ± 2 % and approximately ± 5 %

  • Working voltage range: nominal 1.8 V to 51 V

  • Specified at a low test current (50 μA), ideal for low bias and portable battery-powered applications

  • BZX8450-B11 to -C51: Intentional minor rise of leakage current for optimized fast switching and noise reduction [AN90031].

Applications

  • Low-current general regulation functions

參數類型

型號 Package version Package name Size (mm)
BZX8450-C30 SOT23 SOT23 2.9 x 1.3 x 1

文檔 (8)

文件名稱 標題 類型 日期
BZX8450_SER Low-current voltage regulator diodes Data sheet 2024-07-17
SOT23 3D model for products with SOT23 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT23_mk plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28
SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Package information 2022-10-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
BZX8450-C30 BZX8450-C30 SPICE model SPICE model 2024-10-14
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
BZX8450-C30 BZX8450-C30 SPICE model SPICE model 2024-10-14
SOT23 3D model for products with SOT23 package Design support 2019-01-22

訂購、定價與供貨

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.