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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

GAN111-650WSB

650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package

The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features and benefits

  • Ultra-low reverse recovery charge

  • Simple gate drive (0 V to +10 V or +12 V)

  • Robust gate oxide (±20 V capability)

  • High gate threshold voltage (+4 V) for very good gate bounce immunity

  • Very low source-drain voltage in reverse conduction mode

  • Transient over-voltage capability

Applications

  • Hard and soft switching converters for industrial and datacom power

  • AC/DC Bridgeless totem-pole PFC

  • DC/DC High-frequency resonant converters

  • Datacom and telecom (AC/DC and DC/DC) converters

  • Solar (PV) inverters

  • Servo motor drives

  • TV PSU and LED drivers

參數類型

型號 Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
GAN111-650WSB SOT429-3 TO-247-3L Production cascode N 1 650 114 175 21 0.8 4.9 107 65 4.1 N 336 49 2024-07-03

封裝

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
GAN111-650WSB GAN111-650WSBQ
(934666222127)		 Active GAN111 650WSB SOT429-3
TO-247-3L
(SOT429-3) 		SOT429-3 暫無信息

Boards

Part number Description Type Quick links Shop link
NX-HB-GAN111UL half-bridge evaluation board
NX-HB-GAN111UL half-bridge evaluation board
描述
The NX-HB-GAN111UL half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650V Cascode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 400 VDC, with a power output > 2000 Watts.
類型
Evaluation board
Quick links
Shop link

環境信息

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
GAN111-650WSB GAN111-650WSBQ GAN111-650WSB rohs rhf rhf
品質及可靠性免責聲明

文檔 (10)

文件名稱 標題 類型 日期
GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package Data sheet 2024-06-24
SOT429-3 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2023-12-07
GAN111-650WSB_models_LTspice GAN111-650WSB LTspice model SPICE model 2024-07-22
GAN111-650WSB_models_SIMetrix GAN111-650WSB SIMetrix model SPICE model 2024-07-22
CauerModel_GAN111-650WSB Cauer model GAN111-650WSB Thermal model 2024-07-23
FosterModel_GAN111-650WSB Foster model GAN111-650WSB Thermal model 2024-07-23
GAN111-650WSB GAN111-650WSB RC thermal model Thermal model 2024-07-23
GAN111-650WSB_Cauer GAN111-650WSB Cauer model Thermal model 2024-07-23
GAN111-650WSB_Foster GAN111-650WSB Foster model Thermal model 2024-07-23
UM90045 NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide User manual 2024-09-06

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
GAN111-650WSB_models_LTspice GAN111-650WSB LTspice model SPICE model 2024-07-22
GAN111-650WSB_models_SIMetrix GAN111-650WSB SIMetrix model SPICE model 2024-07-22
CauerModel_GAN111-650WSB Cauer model GAN111-650WSB Thermal model 2024-07-23
FosterModel_GAN111-650WSB Foster model GAN111-650WSB Thermal model 2024-07-23
GAN111-650WSB GAN111-650WSB RC thermal model Thermal model 2024-07-23
GAN111-650WSB_Cauer GAN111-650WSB Cauer model Thermal model 2024-07-23
GAN111-650WSB_Foster GAN111-650WSB Foster model Thermal model 2024-07-23

訂購、定價與供貨

型號 Orderable part number Ordering code (12NC) 狀態 包裝 Packing Quantity 在線購買
GAN111-650WSB GAN111-650WSBQ 934666222127 Active 暫無信息 300 訂單產品

樣品

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可訂購部件

型號 可訂購的器件編號 訂購代碼(12NC) 封裝 從經銷商處購買
GAN111-650WSB GAN111-650WSBQ 934666222127 SOT429-3 訂單產品