可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
---|---|---|---|---|
NX3008CBKS | NX3008CBKS,115 | 934065639115 | SOT363 | 訂單產品 |
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Click here for more information30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low threshold voltage
Very fast switching
Trench MOSFET technology
ESD protection up to 2 kV
AEC-Q101 qualified
Level shifter
Power supply converter
Load switch
Switching circuits
型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NX3008CBKS | SOT363 | TSSOP6 | Production | N/P | 2 | 30 | 1400 | 2100 | 150 | 0.35 | 0.08 | 0.52 | 0.445 | 0.9 | Y | 31 | 6.5 | 2011-07-19 |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
NX3008CBKS | NX3008CBKS,115 (934065639115) |
Active | LD% |
TSSOP6 (SOT363) |
SOT363 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT363_115 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
NX3008CBKS | 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET | Data sheet | 2017-06-08 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP6_SOT363_mk | plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body | Marcom graphics | 2017-01-28 |
SOT363 | plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body | Package information | 2022-06-01 |
SOT363_115 | TSSOP6; Reel pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2020-06-12 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
NX3008CBKS | NX3008CBKS Spice parameter | SPICE model | 2012-04-13 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
MAR_SOT363 | MAR_SOT363 Topmark | Top marking | 2013-06-03 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
NX3008CBKS | NX3008CBKS Spice parameter | SPICE model | 2012-04-13 |
SOT363 | 3D model for products with SOT363 package | Design support | 2018-12-05 |
型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
NX3008CBKS | NX3008CBKS,115 | 934065639115 | Active | SOT363_115 | 3,000 | 訂單產品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.