可訂購部件
型號 | 可訂購的器件編號 | 訂購代碼(12NC) | 封裝 | 從經銷商處購買 |
---|---|---|---|---|
NXT4558GU | NXT4558GUX | 935691708115 | SOT1160-1 | 訂單產品 |
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Click here for more informationSIM card interface level translator with enable pin
The NXT4558 device is built for interfacing a SIM card with a single low-voltage host side interface. The NXT4558 has three level translators to convert the data, RST and CLK signals between a SIM card and a host microcontroller. A high?-?speed level translation capable of supporting class?-?B, class?-?C SIM cards. An active HIGH EN pin enables normal operation of the translator. A HIGH to LOW transition on pin EN initiates a shutdown sequence on SIM card pins in accordance with ISO-7816-3.
The NXT4558 is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface requirements.
Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V
Host micro-controller operating voltage range: 1.08 V to 1.98 V
Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation
Incorporates shutdown feature for the SIM card signals according to ISO-7816-3
High Vdis(UVLO_AC) switching level, arranging quick shut down when VCC_SIM powers down
Integrated pull-up resistors; no external resistor required
Integrated EMI Filters suppresses higher harmonics of digital I/O's
A HIGH EN signal enables the translation of the signals
Low current shutdown mode < 1 μA
Supports clock speed beyond 5 MHz clock
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins are 8kV and 15 kV
Available in 10-pin XQFN package
Specified from -40 °C to +85 °C
NXT4558 can be used with a range of SIM card attached devices including:
Mobile and personal phones
Wireless modems
SIM card terminals
型號 | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name | Category |
---|---|---|---|---|---|---|---|---|---|---|
NXT4558GU | 1.08?-?1.98 | 1.62?-?3.3 | CMOS | ± 1 | 20 | 3 | low | -40~85 | XQFN10 | Application specific |
型號 | 可訂購的器件編號,(訂購碼(12NC)) | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
NXT4558GU | NXT4558GUX (935691708115) |
Active | z8 |
XQFN10 (SOT1160-1) |
SOT1160-1 | SOT1160-1_115 |
文件名稱 | 標題 | 類型 | 日期 |
---|---|---|---|
NXT4558 | SIM card interface level translator with enable pin | Data sheet | 2024-02-27 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1160-1 | 3D model for products with SOT1160-1 package | Design support | 2019-10-03 |
nxt4558gu | NXT4558GU IBIS model | IBIS model | 2023-12-21 |
SIM_card_NXT4558_NXT4559_leaflet | SIM card interface level translators | Leaflet | 2024-06-28 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
XQFN10_SOT1160-1_mk | plastic, extremely thin quad flat package; no leads; 10 terminals; 0.4 mm pitch; 1.4 mm x 1.8 mm x 0.5 mm body | Marcom graphics | 2017-01-28 |
SOT1160-1 | plastic, leadless extremely thin quad flat package; 10 terminals; 0.4 mm pitch; 1.4 mm x 1.8 mm x 0.5 mm body | Package information | 2022-06-07 |
SOT1160-1_115 | XQFN10; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2023-08-31 |
NXT4558GU_Nexperia_Product_Reliability | NXT4558GU Nexperia Product Reliability | Quality document | 2024-06-16 |
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型號 | Orderable part number | Ordering code (12NC) | 狀態 | 包裝 | Packing Quantity | 在線購買 |
---|---|---|---|---|---|---|
NXT4558GU | NXT4558GUX | 935691708115 | Active | SOT1160-1_115 | 4,000 | 訂單產品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.