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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PBLS4004V

40 V PNP BISS loadswitch

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package.

此產品已停產

Features and benefits

  • Low VCEsat (BISS) and resistor-equipped transistor in one package

  • Low threshold voltage (<1 V) compared to MOSFET

  • Low drive power required

  • Space-saving solution

  • Reduction of component count

  • AEC-Q101 qualified

Applications

  • Supply line switches

  • Battery charger switches

  • High-side switches for LEDs, drivers and backlights

  • Portable equipment

參數類型

型號 Package version Package name Size (mm)
PBLS4004V SOT666 SOT666 1.6 x 1.2 x 0.55

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PBLS4004V PBLS4004V,115
(934058635115)		 Obsolete SOT666
(SOT666) 		SOT666 REFLOW_BG-BD-1
SOT666_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PBLS4004V PBLS4004V,115 PBLS4004V rohs rhf rhf
品質及可靠性免責聲明

文檔 (7)

文件名稱 標題 類型 日期
PBLS4004Y_PBLS4004V 40 V PNP BISS loadswitch Data sheet 2009-02-18
SOT666 3D model for products with SOT666 package Design support 2019-01-22
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT666_mk plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Marcom graphics 2017-01-28
SOT666 plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body Package information 2022-06-01
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PBLS4004V PBLS4004V SPICE model SPICE model 2024-08-27

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PBLS4004V PBLS4004V SPICE model SPICE model 2024-08-27
SOT666 3D model for products with SOT666 package Design support 2019-01-22

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.