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30 V, 3.5 A NPN low VCEsat (BISS) transistor
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PD
Features and benefits
AEC-Q101 qualified
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
Low collector-emitter saturation voltage VCEsat
Optimized switching time
Smaller required PCB area than for conventional transistors
Applications
Battery-driven devices
Charging circuits
DC-to-DC conversion
Power management
參數(shù)類型
| 型號 | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | TJ [max] (°C) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4032ND | SOT457 | TSOP6 | 2.9 x 1.5 x 1 | NPN | 480.0 | 30.0 | 3500.0 | 300.0 | 150 | Y |
封裝
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態(tài) | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS4032ND | PBSS4032ND,115 (934063399115) |
Discontinued / End-of-life | ZF |
TSOP6 (SOT457) |
SOT457 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT457_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號均已停產(chǎn) 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS4032ND | PBSS4032ND,115 | PBSS4032ND |
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文檔 (14)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4032ND | 30 V, 3.5 A NPN low V_CEsat (BISS) transistor | Data sheet | 2010-02-03 |
| AN10909 | Low VCEsat transistors in medium power loadswitch applications | Application note | 2013-03-14 |
| AN11045 | Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors | Application note | 2013-03-04 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| TSOP6_SOT457_mk | plastic, surface-mounted package (TSOP6); 6 leads; 0.95 mm pitch; 2.9 mm x 1.5 mm x 1 mm body | Marcom graphics | 2017-01-28 |
| SOT457 | plastic, surface-mounted package (SC-74; TSOP6); 6 leads | Package information | 2023-03-03 |
| PBSS4032ND_Nexperia_Product_Reliability | PBSS4032ND Nexperia Product Reliability | Quality document | 2024-04-23 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS4032ND | PBSS4032ND SPICE model | SPICE model | 2024-08-27 |
| MAR_SOT457 | MAR_SOT457 Topmark | Top marking | 2013-06-03 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要設計/技術(shù)支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS4032ND | PBSS4032ND SPICE model | SPICE model | 2024-08-27 |
| SOT457 | 3D model for products with SOT457 package | Design support | 2022-11-04 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS4032ND
30 V, 3.5 A NPN low VCEsat (BISS) transistor
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