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Click here for more informationPBSS5160V
60 V, 1 A PNP low V_CEsat (BISS) transistor
PNP low VCEsat Breakthrough in Small Signals (BISS) transistor in a SOT666 plastic package.
NPN complement: PBSS4160V.
此產品已停產
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to less heat generation
- Reduces printed-circuit board area required
- Cost effective replacement for medium power transistors BCP52 and BCX52
Applications
- Major application segments
- Telecom infrastructure
- Industrial
- Power management
- DC-to-DC conversion
- Supply line switching
- Peripheral driver
- Driver in low supply voltage applications (e.g. lamps and LEDs)
- Inductive load driver (e.g. relays, buzzers and motors)
參數類型
| 型號 | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) |
|---|---|---|---|---|---|---|---|---|---|
| PBSS5160V | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 | PNP | 300.0 | -60.0 | -1000.0 | 200.0 | 150.0 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5160V | PBSS5160V,115 (934058114115) |
Withdrawn / End-of-life | 51 |
(SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 |
文檔 (9)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5160V | 60 V, 1 A PNP low V_CEsat (BISS) transistor | Data sheet | 2010-01-25 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
| SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
| PBSS5160V_Nexperia_Product_Reliability | PBSS5160V Nexperia Product Reliability | Quality document | 2022-03-21 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5160V | PBSS5160V SPICE model | SPICE model | 2024-08-27 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS5160V
60 V, 1 A PNP low V_CEsat (BISS) transistor
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