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Click here for more informationPBSS5220V
20 V, 2 A PNP low V_CEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.
NPN complement: PBSS4220V.
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- AEC-Q101 qualified
Applications
- DC-to-DC conversion
- MOSFET gate driving
- Motor control
- Charging circuits
- Low power switches (e.g. motors, fans)
- Portable applications
參數類型
| 型號 | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) |
|---|---|---|---|---|---|---|---|---|---|
| PBSS5220V | SOT666 | SOT666 | 1.6 x 1.2 x 0.55 | PNP | 300.0 | -20.0 | -2000.0 | 220.0 | 150.0 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5220V | PBSS5220V,115 (934059261115) |
Withdrawn / End-of-life | N7 |
(SOT666) |
SOT666 |
REFLOW_BG-BD-1
|
SOT666_115 |
文檔 (9)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5220V | 20 V, 2 A PNP low V_CEsat (BISS) transistor | Data sheet | 2010-01-25 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| SOT666 | 3D model for products with SOT666 package | Design support | 2019-01-22 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT666_mk | plastic, surface-mounted package; 6 leads; 1 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Marcom graphics | 2017-01-28 |
| SOT666 | plastic, surface-mounted package; 6 leads; 0.5 mm pitch; 1.6 mm x 1.2 mm x 0.55 mm body | Package information | 2022-06-01 |
| PBSS5220V_Nexperia_Product_Reliability | PBSS5220V Nexperia Product Reliability Quality document | Quality document | 2020-03-11 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5220V | PBSS5220V SPICE model | SPICE model | 2024-08-27 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS5220V
20 V, 2 A PNP low V_CEsat (BISS) transistor
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