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Click here for more informationPBSS5612PA
12 V, 6 A PNP low VCEsat (BISS) transistor
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4612PA.
Alternatives
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Exposed heat sink for excellent thermal and electrical conductivity
- Leadless small SMD plastic package with medium power capability
Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
參數(shù)類型
| 型號(hào) | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|
| PBSS5612PA | SOT1061 | DFN2020-3 | 2 x 2 x 0.65 | PNP | 500.0 | -12.0 | -6000.0 | 220.0 | 40.0 | N |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PBSS5612PA | PBSS5612PA,115 (934063494115) |
Obsolete | A9 |
DFN2020-3 (SOT1061) |
SOT1061 |
REFLOW_BG-BD-1
|
SOT1061_115 |
環(huán)境信息
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
| 型號(hào) | 可訂購(gòu)的器件編號(hào) | 化學(xué)成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PBSS5612PA | PBSS5612PA,115 | PBSS5612PA |
|
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文檔 (11)
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5612PA | 12 V, 6 A PNP low V_CEsat (BISS) transistor | Data sheet | 2010-05-31 |
| AN11045 | Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors | Application note | 2013-03-04 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| SOT1061 | 3D model for products with SOT1061 package | Design support | 2022-06-02 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020-3_SOT1061_mk | plastic, thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1061 | plastic, leadless thermal enhanced ultra thin small outline package; 3 terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-05-27 |
| PBSS5612PA_Nexperia_Product_Quality | PBSS5612PA Nexperia Product Quality | Quality document | 2019-05-20 |
| PBSS5612PA_Nexperia_Product_Reliability | PBSS5612PA Nexperia Product Reliability Quality document | Quality document | 2020-03-11 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PBSS5612PA | PBSS5612PA SPICE model | SPICE model | 2024-08-27 |
支持
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模型
| 文件名稱 | 標(biāo)題 | 類型 | 日期 |
|---|---|---|---|
| PBSS5612PA | PBSS5612PA SPICE model | SPICE model | 2024-08-27 |
| SOT1061 | 3D model for products with SOT1061 package | Design support | 2022-06-02 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS5612PA
12 V, 6 A PNP low VCEsat (BISS) transistor
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