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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PDTA123EE

PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm

PNP resistor-equipped transistor (see ?Simplified outline, symbol and pinning? for package details).

此產品已停產

Features and benefits

  • Built-in bias resistors

  • Simplified circuit design

  • Reduction of component count

  • Reduced pick and place costs.

  • AEC-Q101 qualified

Applications

  • General purpose switching and amplification

  • Inverter and interface circuits

  • Circuit driver.

參數類型

型號 Package version Package name Size (mm)
PDTA123EE SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PDTA123EE PDTA123EE,115
(934058175115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PDTA123EE PDTA123EE,115 PDTA123EE rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
PDTA123E_SERIES PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Data sheet 2004-08-01
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTA123EE PDTA123EE SPICE model SPICE model 2024-08-27

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PDTA123EE PDTA123EE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.