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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PDTA144EE

PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ

PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages.

此產品已停產

Features and benefits

  • 100 mA output current capability

  • Built-in bias resistors

  • Simplifies circuit design

  • Reduces component count

  • Reduces pick and place costs

  • AEC-Q101 qualified

Applications

  • Digital applications in automotive and industrial segments

  • Control of IC inputs

  • Cost-saving alternative for BC847/857 series in digital applications

  • Switching loads

參數類型

型號 Package version Package name Size (mm)
PDTA144EE SOT416 SC-75 1.6 x 0.75 x 0.9

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PDTA144EE PDTA144EE,185
(934051510185)
Obsolete 07 empty empty SOT416
SC-75
(SOT416)
SOT416 暫無信息
PDTA144EE/A2,115
(934062836115)
Obsolete SOT416_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PDTA144EE PDTA144EE,185 PDTA144EE rohs rhf rhf
PDTA144EE PDTA144EE/A2,115 PDTA144EE rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
PDTA144E_SER PNP resistor-equipped transistors;R1 = 47 kOhm, R2 = 47 kOhm Data sheet 2018-08-28
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LSYMTRA Letter Symbols - Transistors; General Other type 1999-05-06
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PDTA144EE PDTA144EE SPICE model SPICE model 2024-08-27

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PDTA144EE PDTA144EE SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.