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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PESD5V0F1BSH

Ultra low capacitance bidirectional ESD protection diode

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless super small DSN0402-2 (SOD992) Surface-Mounted Device (SMD) package.

此產品已停產

Features and benefits

  • Bidirectional ESD protection of one line
  • Extremely low diode capacitance Cd = 0.2 pF
  • Ultra flat package: 0.12 mm high
  • Ultra low leakage current: IRM < 1 nA
  • IEC 61000-4-2, level 4

Applications

ESD and surge protection for:

  • ultra high-speed datalines
  • generic interface lines

in portable electronics, communication, consumer and computing devices.

參數類型

型號 Package name
PESD5V0F1BSH DSN0402-2

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PESD5V0F1BSH PESD5V0F1BSHYL
(934068243315)		 Obsolete SOD992
DSN0402-2
(SOD992) 		SOD992 SOD992_315

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PESD5V0F1BSH PESD5V0F1BSHYL PESD5V0F1BSH rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
PESD5V0F1BSH Ultra low capacitance bidirectional ESD protection diode Data sheet 2017-05-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DSN0402-2_SOD992_mk silicon, leadless tiny package; 2 terminals; 0.25 mm pitch; 0.4 mm x 0.2 mm x 0.1 mm body Marcom graphics 2017-01-28
SOD992 silicon, leadless tiny package; 2 terminals; 0.25 mm pitch; 0.4 mm x 0.2 mm x 0.1 mm body Package information 2020-04-21
PESD5V0F1BSH PESD5V0F1BSH SPICE model SPICE model 2016-05-11

支持

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模型

文件名稱 標題 類型 日期
PESD5V0F1BSH PESD5V0F1BSH SPICE model SPICE model 2016-05-11

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.