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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PESD5V0V1USF

Very low capacitance unidirectional ESD protection diode

Very low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is encapsulated in a leadless super small DSN0603-2 (SOD962) Surface-Mounted Device (SMD) package.

此產品已停產

Features and benefits

  • ESD protection of one line
  • Ultra low leakage current IRM < 1 nA
  • Low diode capacitance Cd = 4 pF
  • ESD protection up to 12 kV
  • Super small SMD package
  • IEC 61000-4-2; level 4 (ESD)

Applications

  • Computers and peripherals
  • Communication systems
  • Audio and video equipment
  • Portable electronics
  • Cellular handsets and accessories

參數類型

型號 Package name
PESD5V0V1USF DSN0603-2

文檔 (8)

文件名稱 標題 類型 日期
AN11046 Recommendations for PCB assembly of DSN0603-2 Application note 2021-04-12
AN11046 Recommendations for PCB assembly of DSN0603-2 Application note 2021-04-12
AN90032 Low temperature soldering, application study Application note 2022-02-22
Nexperia_document_brochure_ESD-Protection-Applications_022017 ESD Protection Application guide Brochure 2018-12-21
SOD962 3D model for products with SOD962 package Design support 2019-10-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DSN0603-2_SOD962-2_mk silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 mm x 0.3 mm x 0.3 mm body Marcom graphics 2017-01-28
SOD962 silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch; 0.6 x 0.3 x 0.3 mm body Package information 2022-05-27

支持

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模型

文件名稱 標題 類型 日期
SOD962 3D model for products with SOD962 package Design support 2019-10-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.