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Click here for more informationPHD96NQ03LT
N-channel TrenchMOS logic level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Low conduction losses due to low on-state resistance
- Simple gate drive required due to low gate charge
Applications
- DC-to-DC convertors
參數(shù)類型
型號(hào) | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PHD96NQ03LT | SOT428 | DPAK | End of life | N | 1 | 25 | 4.95 | 7.5 | 175 | 75 | 8.4 | 115 | 40 | 1.5 | N | 2200 | 725 | 2010-09-02 |
封裝
下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。
型號(hào) | 可訂購(gòu)的器件編號(hào),(訂購(gòu)碼(12NC)) | 狀態(tài) | 標(biāo)示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
---|---|---|---|---|---|---|---|
PHD96NQ03LT | PHD96NQ03LT,118 (934056846118) |
Obsolete | PHD96NQ 03LT Batch No. P**XXYY AZ |
DPAK (SOT428) |
SOT428 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT428_118 |
文檔 (15)
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PHD96NQ03LT | N-channel TrenchMOS logic level FET | Data sheet | 2010-03-15 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT428 | 3D model for products with SOT428 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DPAK_SOT428_mk | plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body | Marcom graphics | 2017-01-28 |
SOT428 | plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body | Package information | 2022-05-20 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PHD96NQ03LT | PHD96NQ03LT SPICE model | SPICE model | 2012-06-08 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
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模型
文件名稱 | 標(biāo)題 | 類型 | 日期 |
---|---|---|---|
PHD96NQ03LT | PHD96NQ03LT SPICE model | SPICE model | 2012-06-08 |
SOT428 | 3D model for products with SOT428 package | Design support | 2017-06-30 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.