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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PMC85XP

30 V P-channel MOSFET with pre-biased NPN transistor

P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

此產品已停產

Features and benefits

  • Trench MOSFET technology
  • NPN transistor built-in bias resistors
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction

Applications

  • Charging switch for portable devices
  • High-side load switch
  • USB port overvoltage protection
  • Power management in battery-driven portables
  • Hard disk and computing power management

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMC85XP SOT1118 DFN2020-6 End of life P 2 -30 12 110 140 150 -3.4 0.95 0.485 -0.7 N 680 54 2012-06-05

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PMC85XP PMC85XP,115
(934066288115)		 Obsolete SOT1118
DFN2020-6
(SOT1118) 		SOT1118 REFLOW_BG-BD-1
SOT1118_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PMC85XP PMC85XP,115 PMC85XP rohs rhf rhf
品質及可靠性免責聲明

文檔 (17)

文件名稱 標題 類型 日期
PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020-6_SOT1118_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1118 plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
nexperia_report_aoi_inspection_dfn_201808 Automatic Optical Inspection of DFN Components Report 2018-09-03
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.