Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPMCM650VNE
12 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
此產品已停產
Features and benefits
- Low threshold voltage
- Ultra small package: 0.98 × 1.48 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
參數類型
| 型號 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCM650VNE | OL-PMCM650VNE | WLCSP6 | End of life | N | 1 | 12 | 8 | 25 | 32 | 150 | 8.4 | 3.6 | 15.4 | 0.556 | 0.6 | N | 1060 | 330 | 2015-04-07 |
封裝
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號，（訂購碼(12NC)） | 狀態 | 標示 | 封裝 | 外形圖 | 回流焊/波峰焊 | 包裝 |
|---|---|---|---|---|---|---|---|
| PMCM650VNE | PMCM650VNEZ (934068627023) |
Obsolete | no package information | ||||
| PMCM650VNEF (934068627135) |
Obsolete | ||||||
環境信息
下表中的所有產品型號均已停產 。
| 型號 | 可訂購的器件編號 | 化學成分 | RoHS | RHF指示符 |
|---|---|---|---|---|
| PMCM650VNE | PMCM650VNEZ | PMCM650VNE |
|
|
| PMCM650VNE | PMCM650VNEF | PMCM650VNE |
|
|
文檔 (8)
| 文件名稱 | 標題 | 類型 | 日期 |
|---|---|---|---|
| PMCM650VNE | 12 V, N-channel Trench MOSFET | Data sheet | 2017-05-19 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| nexperia_document_leaflet_WLCSP_201803 | Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) | Leaflet | 2018-04-25 |
| nexperia_document_leaflet_WLCSP_201803_CHN | WLCSP Chinese Translation | Leaflet | 2018-04-25 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
支持
如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。
模型
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.