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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PMCM950ENE

60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a 9 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

此產品已停產

Features and benefits

  • Low threshold voltage

  • Ultra small package: 1.48 × 1.48 × 0.35 mm

  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

Applications

  • High-speed line driver

  • Low-side load switch

  • Switching circuits

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMCM950ENE WLCSP9_3X3 WLCSP9 End of life N 1 60 20 41 47 150 6.1 5.9 30 0.78 1.2 N 1160 71 2019-05-13

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號,(訂購碼(12NC)) 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PMCM950ENE PMCM950ENEZ
(934660311023)
Discontinued / End-of-life WLCSP9_3X3
WLCSP9
(WLCSP9_3X3)
WLCSP9_3X3 暫無信息

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PMCM950ENE PMCM950ENEZ PMCM950ENE rohs rhf rhf
品質及可靠性免責聲明

文檔 (5)

文件名稱 標題 類型 日期
PMCM950ENE 60 V, N-channel Trench MOSFET Data sheet 2019-05-13
WLCSP9_3X3 3D model for products with WLCSP9_3X3 package Design support 2023-03-13
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
WLCSP9_3X3 WLCSP9: wafer level chip-size package; 9 bumps (3 x 3) Package information 2020-04-21
PMCM950ENE PMCM950ENE SPICE model SPICE model 2020-02-19

支持

如果您需要設計/技術支持,請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PMCM950ENE PMCM950ENE SPICE model SPICE model 2020-02-19
WLCSP9_3X3 3D model for products with WLCSP9_3X3 package Design support 2023-03-13

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.