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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車(chē)應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PMDPB28UN

20 V, dual N-channel Trench MOSFET

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Very fast switching

  • Trench MOSFET technology

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

  • Exposed drain pad for excellent thermal conduction

Applications

  • Relay driver

  • LED backlight driver

  • Low-side loadswitch

  • Switching circuits

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMDPB28UN SOT1118 DFN2020-6 End of life N 2 20 8 37 51 150 5.8 0.87 3.1 0.51 0.7 N 265 76 2012-05-01

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PMDPB28UN PMDPB28UN,115
(934066488115)		 Obsolete SOT1118
DFN2020-6
(SOT1118) 		SOT1118 REFLOW_BG-BD-1
SOT1118_115

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PMDPB28UN PMDPB28UN,115 PMDPB28UN rohs rhf rhf
品質(zhì)及可靠性免責(zé)聲明

文檔 (17)

文件名稱 標(biāo)題 類型 日期
PMDPB28UN 20 V, dual N-channel Trench MOSFET Data sheet 2012-05-01
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020-6_SOT1118_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1118 plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMDPB28UN_21_02_2012 PMDPB28UN_21_02_2012 Spice parameter SPICE model 2012-04-16
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫(xiě) 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PMDPB28UN_21_02_2012 PMDPB28UN_21_02_2012 Spice parameter SPICE model 2012-04-16
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.