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雙極性晶體管

二極管

ESD保護(hù)、TVS、濾波和信號(hào)調(diào)節(jié)ESD保護(hù)

MOSFET

氮化鎵場(chǎng)效應(yīng)晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應(yīng)用認(rèn)證產(chǎn)品(AEC-Q100/Q101)

PMGD8000LN

Dual N-channel TrenchMOS logic level FET

Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

此產(chǎn)品已停產(chǎn)

Features and benefits

  • Saves PCB space due to small footprint
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources

Applications

  • Battery management
  • High-speed switching
  • Low power DC-to-DC convertors

參數(shù)類型

型號(hào) Package version Package name Product status Channel type Nr of transistors Automotive qualified Release date
PMGD8000LN SOT363 TSSOP6 End of life N 2 N 2011-01-24

封裝

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào)，（訂購(gòu)碼(12NC)） 狀態(tài) 標(biāo)示 封裝 外形圖 回流焊/波峰焊 包裝
PMGD8000LN PMGD8000LN,115
(934057621115)		 Obsolete SOT363
TSSOP6
(SOT363) 		SOT363 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT363_115
PMGD8000LN,215
(934057621215)		 Obsolete 暫無信息

環(huán)境信息

下表中的所有產(chǎn)品型號(hào)均已停產(chǎn) 。

型號(hào) 可訂購(gòu)的器件編號(hào) 化學(xué)成分 RoHS RHF指示符
PMGD8000LN PMGD8000LN,115 PMGD8000LN rohs rhf rhf
PMGD8000LN PMGD8000LN,215 PMGD8000LN    
品質(zhì)及可靠性免責(zé)聲明

文檔 (20)

文件名稱 標(biāo)題 類型 日期
PMGD8000LN Dual uTrenchMOS (tm) logic level FET Data sheet 2003-02-26
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90032 Low temperature soldering, application study Application note 2022-02-22
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT363 3D model for products with SOT363 package Design support 2018-12-05
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP6_SOT363_mk plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body Marcom graphics 2017-01-28
SOT363 plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body Package information 2022-06-01
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMGD8000LN_30_05_2012 PMGD8000LN Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
MAR_SOT363 MAR_SOT363 Topmark Top marking 2013-06-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

支持

如果您需要設(shè)計(jì)/技術(shù)支持，請(qǐng)告知我們并填寫 應(yīng)答表 我們會(huì)盡快回復(fù)您。

模型

文件名稱 標(biāo)題 類型 日期
PMGD8000LN_30_05_2012 PMGD8000LN Spice model SPICE model 2013-12-13
SOT363 3D model for products with SOT363 package Design support 2018-12-05

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.