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雙極性晶體管

二極管

ESD保護、TVS、濾波和信號調節ESD保護

MOSFET

氮化鎵場效應晶體管(GaN FET)

絕緣柵雙極晶體管(IGBTs)

模擬和邏輯IC

汽車應用認證產品(AEC-Q100/Q101)

PMPB29XPE

20 V, single P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

此產品已停產

Features and benefits

  • 2.3 kV ESD protected

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

  • Exposed drain pad for excellent thermal conduction

  • Tin-plated 100 % solderable side pads for optical solder inspection

Applications

  • Charging switch for portable devices

  • DC-to-DC converters

  • Power management in battery-driven portable devices

  • Hard disk and computing power management

參數類型

型號 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) VESD (kV) (kV) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMPB29XPE SOT1220 DFN2020MD?6 Production P 1 -20 12 32.5 38 2300 150 -5 7 30 1.7 -0.68 N 2970 245 2012-12-11

封裝

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號，（訂購碼(12NC)） 狀態 標示 封裝 外形圖 回流焊/波峰焊 包裝
PMPB29XPE PMPB29XPE,115
(934066873115)		 Discontinued / End-of-life 1T SOT1220
DFN2020MD?6
(SOT1220) 		SOT1220 REFLOW_BG-BD-1
SOT1220_115

環境信息

下表中的所有產品型號均已停產 。

型號 可訂購的器件編號 化學成分 RoHS RHF指示符
PMPB29XPE PMPB29XPE,115 PMPB29XPE rohs rhf rhf
品質及可靠性免責聲明

文檔 (22)

文件名稱 標題 類型 日期
PMPB29XPE 20 V, single P-channel Trench MOSFET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90023 Thermal performance of DFN packages Application note 2020-11-23
Nexperia_asset_document_brochure_autoDFN_CN_LR 小巧輕便的汽車 二極管和晶體管 Brochure 2022-04-26
SOT1220 3D model for products with SOT1220 package Design support 2018-08-23
Nexperia_AutoDFN_factsheet_2022 Small & light automotive diodes and transistors Leaflet 2022-04-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020MD-6_SOT1220_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1220 plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
nexperia_report_aoi_inspection_dfn_201808 Automatic Optical Inspection of DFN Components Report 2018-09-03
nexperia_report_aoi_inspection_dfn_201808 Automatic Optical Inspection of DFN Components Report 2018-09-03
PMPB29XPE_19_10_2012 PMPB29XPE Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

支持

如果您需要設計/技術支持，請告知我們并填寫 應答表 我們會盡快回復您。

模型

文件名稱 標題 類型 日期
PMPB29XPE_19_10_2012 PMPB29XPE Spice model SPICE model 2013-12-13
SOT1220 3D model for products with SOT1220 package Design support 2018-08-23

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.